डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TK4P60D | Silicon N-Channel MOSFET MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P60D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |
Toshiba Semiconductor |
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TK4P60DA | Silicon N-Channel MOSFET MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P60DA
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfe |
Toshiba Semiconductor |
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TK4P60DA | N-Channel MOSFET Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK4P60DA
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot |
INCHANGE |
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TK4P60DB | N-Channel MOSFET iscN-Channel MOSFET Transistor
TK4P60DB
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 2Ω (MAX) ·Enhancement mode:
Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
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TK4P60DB | Silicon N-Channel MOSFET MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P60DB
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance |
Toshiba Semiconductor |
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