डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TK4A80E | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK4A80E,ITK4A80E
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤3.5Ω. ·Enhancement mode:
Vth = 2.5 to4.0V (VDS = 10 V, ID=0.4mA) ·100% ava |
INCHANGE |
|
TK4A80E | N-Channel MOSFET MOSFETs Silicon N-Channel MOS (π-MOS)
TK4A80E
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 10 |
Toshiba |
www.DataSheet.in | 2017 | संपर्क |