TK4A डाटा शीट PDF( Datasheet )

Topstek Current Transducer TK3A .. TK50A TK 3A~50A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight ♦ Fast response time ♦ Excellent linearity of the output voltage over a wide

TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) High forward trans

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A50D，ITK4A50D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100

TK4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A53D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A53D，ITK4A53D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.3Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100

TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A55D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A55D，ITK4A55D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.5Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100