TK42E12N1 डाटा शीट PDF( Datasheet )

Isc N-Channel MOSFET Transistor TK42E12N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 9.4mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Min

TK42E12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK42E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V) L