TK3R3E03GL डाटा शीट PDF( Datasheet )

MOSFETs Silicon N-Channel MOS (U-MOS-H) TK3R3E03GL 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage curr

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK3R3E03GL，ITK3R3E03GL ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.3mΩ. ·Enhancement mode: Vth =1.3 to 2.3V (VDS = 10 V, ID=0.5mA) ·1