TK3R3A06PL डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK3R3A06PL，ITK3R3A06PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2.5mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 2.5V (VDS = 1

MOSFETs Silicon N-channel MOS (U-MOS�-H) TK3R3A06PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate