TK3P80E डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤4.9Ω. ·Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variatio

MOSFETs Silicon N-Channel MOS (π-MOS) TK3P80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.9 Ω (typ.) (2) Low leakage current : IDSS = 10 µ