TK3A90E डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK3A90E，ITK3A90E ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤4.6Ω. ·Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.25mA) ·100% av

MOSFETs Silicon N-Channel MOS (π-MOS) TK3A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 3.7 Ω (typ.) (2) Low leakage current : IDSS = 10