डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TK30E06N1 | Silicon N-Channel MOSFET MOSFETs Silicon N-channel MOS (U-MOS-H)
TK30E06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage curr |
Toshiba Semiconductor |
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TK30E06N1 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK30E06N1,ITK30E06N1
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤15.0mΩ. (VGS = 10 V) ·Enhancement mode:
Vth =2.0 to 4.0V (VDS = 10 V, I |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |