TK2A65D डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor TK2A65D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.26Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-t

MOSFETs Silicon N-Channel MOS (π-MOS) TK2A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.8 Ω (typ.) (2) High forward transfer admittance: