डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TK20J60W | N-Channel MOSFET isc N-Channel MOSFET Transistor
TK20J60W
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤ 155mΩ ·Easy to control Gate switching ·Enhancement mode:
Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA) ·100% ava |
INCHANGE |
|
TK20J60W | N-Channel MOSFET MOSFETs Silicon N-Channel MOS (DTMOS)
TK20J60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : |
Toshiba |
|
TK20J60W5 | Silicon N-Channel MOSFET TK20J60W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK20J60W5
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Fast reverse recovery time: trr = 110 ns (typ.) Low drain-source on-re |
Toshiba Semiconductor |
|
TK20J60W5 | N-Channel MOSFET isc N-Channel MOSFET Transistor
TK20J60W5
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤ 175mΩ ·Easy to control Gate switching ·Enhancement mode:
Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA) ·100% av |
INCHANGE |
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