TK20E60W डाटा शीट PDF( Datasheet )

TK20E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super J

Isc N-Channel MOSFET Transistor TK20E60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 155mΩ (MAX) ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to

Isc N-Channel MOSFET Transistor TK20E60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 175mΩ (MAX) ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to

MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) =