TK20A डाटा शीट PDF( Datasheet )

Topstek Current Transducer TK3A .. TK50A TK 3A~50A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight ♦ Fast response time ♦ Excellent linearity of the output voltage over a wide

MOSFETs Silicon N-Channel MOS (π-MOS) TK20A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.07 Ω (typ.) (2) Low leakage current: IDSS = 10

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK20A20D，ITK20A20D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.07Ω (typ.) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·

MOSFETs Silicon N-Channel MOS (π-MOS) TK20A25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Low leakage current: IDSS = 10

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK20A25D，ITK20A25D ·FEATURES ·Low drain-source on-resistance: RDS(on) = 0.073Ω (typ.) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)

TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) • High forward transfer

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK20A60U, ITK20A60U ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.165Ω (typ.) ·Low leakage current: IDSS = 100μA (max) (VDS = 600 V) ·Enh