डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TK18 | Phase Control Thyristor TK18
TK18
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1200V 115A 2 |
Dynex Semiconductor |
|
TK18 | Capacitive Touch Key Flash MCU TK18
Capacitive Touch Key Flash MCU with ADC/PWM/LED Driver
Datasheet
TK MCU Series
Revision 1.7 Jan. 2016
ENE RESERVES THE RIGHT TO AMEND THIS DOCUMENT WITHOUT NOTICE AT ANY TIME. ENE ASSUMES NO RESPONSIBILITY |
ene |
|
TK18.5A | Current Transducer Topstek Current Transducer TK3A .. TK50A
TK 3A~50A
Features
♦ Highly reliable Hall Effect device ♦ Compact and light weight ♦ Fast response time ♦ Excellent linearity of the output voltage over a wide |
Topstek |
|
TK1810MK | Phase Control Thyristor TK18
TK18
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1200V 115A 2 |
Dynex Semiconductor |
|
TK1812MK | Phase Control Thyristor TK18
TK18
Phase Control Thyristor Advance Information
Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001
FEATURES
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1200V 115A 2 |
Dynex Semiconductor |
|
TK18A30D | Silicon N-Channel MOSFET MOSFETs Silicon N-Channel MOS (π-MOS)
TK18A30D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µ |
Toshiba Semiconductor |
|
TK18A30D | N-Channel MOSFET iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
TK18A30D,ITK18A30D
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 0.1Ω (typ.) ·Enhancement mode:
Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·1 |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |