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TIP3055 | POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP3055/D
Complementary Silicon Power Transistors
TIP3055 PNP TIP2955
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS
NPN
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Motorola |
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TIP3055 | Complementary Silicon Power Transistors TIP3055 (NPN), TIP2955 (PNP)
Complementary Silicon Power Transistors
Designed for general−purpose switching and amplifier applications.
Features
• DC Current Gain −
hFE = 20 − 70 @ IC = 4.0 Adc
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ON Semiconductor |
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TIP3055 | Complementary power transistors TIP2955 TIP3055
Complementary power transistors
Features
■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors
Applications
■ General purpose ■ Audio Amplifier
Description
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STMicroelectronics |
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TIP3055 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type |
INCHANGE |
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TIP3055 | (TIP2955 / TIP3055) Silicon Power Transistors SEMICONDUCTORS
PNP TIP2955 NPN TIP3055 SILICON POWER TRANSISTORS
The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for power switching circuits, series and shunt regulators, output |
Comset Semiconductors |
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TIP3055F | NPN Transistor isc Silicon NPN Power Transistor
isc Product Specification
TIP3055F
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V |
INCHANGE |
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TIP3055T | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC = 4A ·Complement to Type TI |
Inchange Semiconductor |
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