TIP112 डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor TIP112 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturat

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeter

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TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor November 2014 TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in

® TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED AN

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP110/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applicati

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • H