TIP111 डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor TIP111 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturati

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  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP110/111/112 Features • The complementary PNP types

TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor November 2014 TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP110/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applicati

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • H

TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q Designed for Complementary Use with TIP115, TIP116 and TIP117 50 W at

TIP111 Silicon NPN Transistor Darlington Power Amp, Switch TO−220 Type Package Description: The TIP111 is a silicon NPN Darlington transistor in a TO−220 type package designed for general purpose amplifier