डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM7785-30UL | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.0dBm at 7.7GHz to 8.5GHz ・HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ・LOW INTERMODULATION DISTORTION
IM3(MIN.)= -44dBc at Pout= 34.0dBm Si |
Toshiba |
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TIM7785-30UL | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |