डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM7179-8UL | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 39.5dBm at 7.1GHz to 7.9GHz ・HIGH GAIN
G1dB= 9.0dB at 7.1GHz to 7.9GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7179-8UL
R |
Toshiba |
|
TIM7179-8UL | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |