डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM6472-30UL | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET
TIM6472-30UL
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.0dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ・HERMETICALLY SEALED PACKAGE
R |
Toshiba |
|
TIM6472-30UL | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |