डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM6472-16UL | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM6472-16UL
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Toshiba |
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TIM6472-16UL | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |