डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM5964-4SL-422 | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 5.85GHz to 6.75GHz ・HIGH GAIN
G1dB= 8.0dB(Min.) at 5.85GHz to 6.75GHz ・HERMETICALLY SEALED PACKAGE ・LOW INTERMODULATION DISTORT |
Toshiba |
|
TIM5964-4SL-422 | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |