डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM5964-30UL | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.0dBm at 5.9GHz to 6.4GHz ・HIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5964-30UL
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Toshiba |
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TIM5964-30UL | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |