डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM5964-30SL | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET www.DataSheet4U.com MICROWAVE SEMICONDUCTOR
TIM5964-30SL
TECHNICAL DATA FEATURES
n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=4 |
Toshiba Semiconductor |
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TIM5964-30SL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |