TIM1414-8 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 5.0 dB at 14.0 GHz to

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www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier