डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM1414-7 | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 38.5dBm at 14.0GHz to 14.5GHz ・HIGH GAIN
G1dB= 6.5dB at 14.0GHz to 14.5GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1414-7
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Toshiba Semiconductor |
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TIM1414-7-253 | Microwave Power GaAs FET www.DataSheet4U.com
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Toshiba |
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