| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Toshiba |
Microwave Power GAAS Fet |
|
|
|
|
Toshiba |
Microwave Power GaAs FET |
|
|
|
|
Toshiba Semiconductor |
POWER GAAS FET |
|
|
|
|
Toshiba |
Microwave Power GaAs FET heet4U.com −1− DataSheet4U.com DataSheet 4 U .com |
|
|
|
|
Toshiba |
Microwave Power GaAs FET |
|
|
|
|
Toshiba |
MICROWAVE POWER GaAs FET ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 36dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF |
|
|
|
|
Toshiba |
Microwave Power GaAs FET |
|