TIM1414-2 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 7.5dB at 14.0GHz to 14.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-2L