डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM1314-8UL | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 39.0dBm at 13.75GHz to 14.5GHz ・HIGH GAIN
G1dB= 7.0dB at 13.75GHz to 14.5GHz ・LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 27.0dBm Si |
Toshiba |
|
TIM1314-8UL | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |