डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM1213-30L | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET
TIM1213-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 12.7GHz to 13.2GHz ŋHIGH GAIN
G1dB= 5.5dB at 12.7GHz to 13.2GHz ŋLOW INTERMODULATION DISTORTION
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Toshiba |
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TIM1213-30L | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |