डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM1213-18L | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.5dBm at 12.7GHz to 13.2GHz ・HIGH GAIN
G1dB= 6.0dB at 12.7GHz to 13.2GHz ・LOW INTERMODULATION DISTORTION
IM3= -28dBc at Pout= 36.0dBm Sing |
Toshiba |
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TIM1213-18L | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |