TIM1112-4UL डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| TIM1112-4UL | MICROWAVE POWER GaAs FET FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 11.7GHz to 12.7GHz ･HIGH GAIN
G1dB= 9.5dB at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTOTION
IM3=-45dBc at Pout= 24.0dBm Single |
 Toshiba |
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| TIM1112-4UL | MICROWAVE POWER GaAs FET | Toshiba |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |