डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM1011-8L | MICROWAVE POWER GaAs FET www.DataSheet4U.com
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-8L
TECHNICAL DATA FEATURES
LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level HIGH POWER P1dB= |
Toshiba Semiconductor |
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TIM1011-8L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
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TIM1011-8UL | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |