डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM1011-2L | MICROWAVE POWER GaAs FET www.DataSheet4U.com
TOSHIBA
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
MICROWAVE POWER GaAs FET
TIM1011-2L
HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
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Toshiba Semiconductor |
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TIM1011-2L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |