डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM0910-8 | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 39.5dBm at 9.5GHz to 10.5GHz ・HIGH GAIN
G1dB= 6.0dB at 9.5GHz to 10.5GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM0910-8
R |
Toshiba |
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TIM0910-30L | MICROWAVE POWER GaAs FET | Toshiba |
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TIM0910-8 | MICROWAVE POWER GaAs FET | Toshiba |
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TIM0910-4 | MICROWAVE POWER GaAs FET | Toshiba |
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TIM0910-15L | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |