TIM0910-4 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| TIM0910-4 | MICROWAVE POWER GaAs FET FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 7.5dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM0910-4
R |
 Toshiba |
|
| TIM0910-30L | MICROWAVE POWER GaAs FET | Toshiba |
|
| TIM0910-8 | MICROWAVE POWER GaAs FET | Toshiba |
|
| TIM0910-15L | MICROWAVE POWER GaAs FET | Toshiba |
|
| TIM0910-4 | MICROWAVE POWER GaAs FET | Toshiba |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |