डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM0910-30L | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET
TIM0910-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN
G1dB= 7.0dB at 10.5GHz to 10.5GHz ŋLOW INTERMODULATION DISTORTION
I |
Toshiba |
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TIM0910-30L | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |