डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TH58BYG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM TH58BYG3S0HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58BYG3S0HBAI4 is a single 1.8V 8 Gbit (8,858,370,048 bits) NAND Electrically Era |
Toshiba |
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TH58BYG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM | Toshiba |
www.DataSheet.in | 2017 | संपर्क |