डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TC58DVM92A1FT0 | 512M-Bit CMOS NAND EPROM TC58DVM92A1FTI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M u 8 BITS) CMOS NAND E PROM DESCRIPTION
The device is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable |
Toshiba |
|
TC58DVM92A1FT00 | 512M-Bit CMOS NAND EPROM TC58DVM92A1FT00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E PROM DESCRIPTION
The device is a single 3.3 V 512Mbit (553,648,128) bit NAND Electrically Erasable |
Toshiba |
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