डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TC51 | 1uA Voltage Detector TC51
1A Voltage Detector with Output Delay
Features
• Precise Detection Thresholds: ±2.0% • Small Package: 3-Pin SOT-23A • Low Supply Current: Typ. 1A • Wide Detection Range: 1.6V to 6.0V • W |
Microchip |
|
TC510 | Precision Analog Front Ends TC500/A/510/514
Precision Analog Front Ends with Dual Slope ADC
Features:
• Precision (up to 17 bits) A/D Converter “Front End”
• 3-Pin Control Interface to Microprocessor • Flexible: User Can Trade- |
Microchip |
|
TC510 | (TC5xx) PRECISION ANALOG FRONT ENDS ( DataSheet : www.DataSheet4U.com )
PRECISION ANALOG FRONT ENDS
EVALUATION KIT AVAILABLE
TC500 TC500 TC500A TC500A TC510 TC510 TC514 TC514
PRECISION ANALOG FRONT ENDS
FEATURES
s s s s s s s s s Precision (up |
TelCom Semiconductor |
|
TC511000J-10 | DRAM TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS
DESCRIPTION
TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12
The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized |
Toshiba |
|
TC511000J-12 | DRAM TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS
DESCRIPTION
TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12
The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized |
Toshiba |
|
TC511000J-85 | DRAM TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS
DESCRIPTION
TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12
The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized |
Toshiba |
|
TC511000P-10 | DRAM TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS
DESCRIPTION
TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12
The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized |
Toshiba |
www.DataSheet.in | 2017 | संपर्क |