डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TC1101 | Low Noise and Medium Power GaAs FETs TRANSCOM
TC1101
January 2002
Low Noise and Medium Power GaAs FETs
FEATURES • • • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dy |
Transcom |
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TC110G11 | CMOS Gate Array | Toshiba |
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TC110G14 | CMOS Gate Array | Toshiba |
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TC110G17 | CMOS Gate Array | Toshiba |
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TC110G03 | CMOS Gate Array | Toshiba |
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TC110G08 | CMOS Gate Array | Toshiba |
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TC110G05 | CMOS Gate Array | Toshiba |
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TC110G21 | CMOS Gate Array | Toshiba |
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TC1101 | Low Noise and Medium Power GaAs FETs | Transcom |
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TC110Gxx | CMOS Gate Array | Toshiba |
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TC1107 | 300mA CMOS LDO | Microchip |
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