SiHF22N65E डाटा शीट PDF( Datasheet )

www.vishay.com SiHF22N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 110 15 32 Single

isc N-Channel MOSFET Transistor SiHF22N65E ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perf