SiHD12N50E डाटा शीट PDF( Datasheet )

www.vishay.com SiHD12N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 50 6 10 Single 0

Isc N-Channel MOSFET Transistor SiHD12N50E ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations fo