Si4435 डाटा शीट PDF( Datasheet )

Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-

Si4435BDY www.DataSheet4U.com Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −30 FEATURES ID (A) −9.1 −6.9 rDS(on) (W) 0.020 @ VGS = −10 V 0.035 @ VGS = −4.5 V D TrenchFETr

PD- 93768A Si4435DY HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 7 A D D D D S S G 2 VDSS = -30V RDS(on) = 0.020Ω 3 6 4 5 D

SSMMDD TTyyppee ■ Features ● VDS=-30V ● RDS(on)=0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 MOSFET 1.50 0.15 +0.040.21 -0.02 S G D ■ Absolute Maximum

SI4435DY December 2018 SI4435DY 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been

www.DataSheet4U.com PD- 95133 Si4435DYPbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S 1 8 A D D D D S S G 2 7 VDSS = -3

www.vishay.com Si4435FDY Vishay Siliconix P-Channel 30 V (D-S) MOSFET SO-8 Single D D5 D6 D7 8 FEATURES • TrenchFET® Gen III p-channel power MOSFET • 100% Rg tested • Material categorization:  f