डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
Si4410DY | N-channel FET Si4410DY
N-channel enhancement mode field-effect transistor
M3D315
Rev. 02 — 05 July 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchM |
NXP |
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Si4410DY | Single N-Channel MOSFET Si4410DY
May 1999
Si4410DY*
Single N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process th |
Fairchild Semiconductor |
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Si4410DY | N-Channel MOSFET N-Channel 30-V (D-S) MOSFET
Si4410DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0135 @ VGS = 10 V 30
0.020 @ VGS = 4.5 V
ID (A)
10 8
FEATURES D TrenchFETr Power MOSFET
D
SO-8
S1 S2 S3 G4
|
Vishay |
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Si4410DY | Power MOSFET PD - 91853C
Si4410DY
l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive
S S S G
Description
This N-channel HEXFET® Power MOSFET is produced using International Rect |
International Rectifier |
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Si4410DYPbF | Power MOSFET l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l Lead-Free
Description
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEX |
International Rectifier |
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