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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
Si2304 | N-Channel Enhancement Mode Field Effect Transistor Si2304
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) ( |
SiPU |
|
Si2304 | N-channel FET MCC R
Micro Commercial Components
Features
Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone:(818) 701-4933 Fax: (818) 701-4939
SI2304
• Halogen free available upon request by addi |
MCC |
|
Si2304 | 30V N-Channel Enhancement Mode MOSFET SI2304
30V N-Channel Enhancement Mode MOSFET
VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A
70m Ω 80mΩ
Features Advanced trench process technology High Density Cell Design For Ultra |
PUOLOP |
|
Si2304BDS | N-channel MOSFET N-Channel 30 V (D-S) MOSFET
Si2304BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V
ID (A) 3.2 2.6
Qg (Typ.) 2.6
FEATURES
• Halogen-free According t |
Vishay |
|
Si2304DDS | N-Channel MOSFET New Product
N-Channel 30-V (D-S) MOSFET
Si2304DDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.060 at VGS = 10 V 30
0.075 at VGS = 4.5 V
ID (A)a 3.6 3.6
Qg (Typ.) 2.1 nC
FEATURES
• Halogen- |
Vishay |
|
Si2304DS | N-channel FET SI2304DS
N-channel enhancement mode field-effect transistor
Rev. 01 — 17 August 2001
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using Trench |
NXP |
|
Si2304DS | N-channel MOSFET N-Channel 30-V (D-S) MOSFET
Si2304DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V
ID (A)
2.5 2.0
TO-236 (SOT-23)
G1 S2
3D
Top View Si2304DS (A4)* *Mark |
Vishay |
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