डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SW7N65 | N-channel MOSFET SAMWIN
TO-220F TO-220
SW7N65
N-channel MOSFET
BVDSS : 650V ID : 7.0A RDS(ON) : 1.32ohm
1 2 1 3 2 2 3 1 3
Features
■ High ruggedness ■ RDS(ON) (Max 1.32 Ω)@VGS=10V ■ Gate Charge (Typ 35nC) ■ Improved |
SAMWIN |
|
SW7N65B | N-channel TO-220F MOSFET SAMWIN
Features
■ High ruggedness ■ RDS(ON) (Max 1.4 Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F
SW7N65B
N-channel TO-220F MOSFET
BVDSS : 650 |
SEMIPOWER |
|
SW7N65DA | N-channel MOSFET SW7N65DA
N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET
Features
High ruggedness Low RDS(ON) (Typ 1.4Ω)@VGS=10V Low Gate Charge (Typ 25nC) Improved dv/dt Capability 100% Avalanche |
Samwin |
|
SW7N65K | N-channel MOSFET SW7N65K
N-channel Enhanced mode TO-220F/TO-220SF/TO-251/TO251N/TO-252/TO-220 MOSFET
Features
TO-220F TO-220SF TO-251 TO-251N TO-252 TO-220
High ruggedness
Low RDS(ON) (Typ 0.5Ω)@VGS=10V Low G |
Samwin |
|
SW7N65K2 | N-channel MOSFET SW7N65K2
N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET
Features
TO-220F TO-251 TO-251N TO-252
High ruggedness
Low RDS(ON) (Typ 0.57Ω)@VGS=10V Low Gate Charge (Typ 14.5nC)
|
Samwin |
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