SW7N60 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) : 600 V : 1 ohm : 7.0 A : 30 nc : 142 W SW7N60 General Description This

SAMWIN SW7N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 1.05Ω)@VGS=10V  Low Gate Charge (Typ 30nC)  Impr

SAMWIN SW7N60H N-channel TO-220F MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 1.32Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3

SAMWIN SW7N60K N-channel TO-220F/I-PAK MOSFET Features TO-220F TO-251 ■ High ruggedness ■ RDS(ON) (Max 0.6Ω)@VGS=10V ■ Gate Charge (Typical 21nC) ■ Improved dv/dt Capability ■ 100% Avalanche T

SAMWIN SW7N60R N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max1.25Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. G