डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SW4N60 | N-Channel MOSFET w
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SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 7 |
Samwin |
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SW4N60A | N-Channel MOSFET www.DataSheet.co.kr
SAMWIN
SW4N60A
N-channel MOSFET
BVDSS : 600V ID : 4.0A RDS(ON) : 2.2ohm
1 2 1 3 2 2
Features
■ High ruggedness ■ RDS(ON) (Max 2.2 Ω)@VGS=10V ■ Gate Charge (Typ 25nC) ■ Improved |
Samwin |
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SW4N60B | N-channel I-PAK/D-PAK/TO-220F MOSFET SAMWIN
TO-251 TO-252 TO-220F
SW4N60B
N-channel I-PAK/D-PAK/TO-220F MOSFET
BVDSS : 600V ID
1
Features
■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) ■ Improved dv/dt Capabil |
SEMIPOWER |
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SW4N60D | MOSFET SAMWIN
SW4N60D
N-channel TO-220F/I-PAKN/D-PAK MOSFET
Features
TO-220F TO-251N TO-252
■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge (Typ 18nC) ■ Improved dv/dt Capability ■ 100% A |
SEMIPOWER |
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SW4N60K | N-Channel MOSFET SW4N60K
N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET
Features
High ruggedness Low RDS(ON) (Typ 1Ω)@VGS=10V Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tes |
SEMIPOWER |
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SW4N60V | N-Channel MOSFET www.DataSheet.co.kr
SAMWIN
SW4N60V
N-channel MOSFET
BVDSS : 600V ID : 4.0A RDS(ON) : 2.5ohm
1 2 2
Features
■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 25nC) ■ Improved dv/dt |
Samwin |
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