SW20N50 डाटा शीट PDF( Datasheet )

SAMWIN SW20N50 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Max 80nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P BVDSS : 5

SW20N50D Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification N-channel MOSFET BVDSS 500V ID 20A RDS(on) < 0.3W Device SW20N50D Packa

SAMWIN SW20N50U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Typ 103 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1. Gate